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10V Drive Nch MOSFET
R6020ANJ
Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy.
(1) Base (Gate)
Dimensions (Unit : mm)
LPTS
10.1 4.5 1.3
13.1 9.0
3.0
1.0
1.24
0.78
(3)
5.08
(1) (2)
2.7
Applications Switching Packaging specifications
Package Type Code Basic ordering unit (pieces) R6020ANJ Taping TL 1000
(2) Collector (Drain) (3) Emitter (Source) Each lead has same dimensions
LPTL
8.9 4.8
(1) Base (Gate) (2) Collector (Drain)
(1) (2) (3)

Package Type Code Basic ordering unit (pieces) R6020ANJ Taping TLL 1000
(3) Emitter (Source)
Each lead has same dimensions
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25C) Channel temperature Range of storage temperature
1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum temperature allowed
Inner circuit
Limits 600 30 Unit V V A A A A A mJ W C C
(1)
(1) Gate (2) Drain (3) Source
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
3 1 3 1 2 2
20 80 20 80 10 26.7 100 150 -55 to +150
1
(2)
(3) 1 Body Diode
Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits 1.25 Unit C/W
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1/5
2009.06 - Rev.A
1.2
2.54
0.4
R6020ANJ
Electrical characteristics (Ta=25C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
Data Sheet
Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Min. - 600 - 2.5 - 7 - - - - - - - - - -
Typ. - - - - 0.19 - 2040 1660 70 40 60 230 70 65 10 25
Max. 100 - 100 4.5 0.25 - - - - - - - - - - -
Unit nA V A V S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V ID=10A, VDS=10V VDS=25V VGS=0V f=1MHz ID=10A, VDD 300V VGS=10V RL=30 RG=10 VDD 300V ID=20A VGS=10V RL=15 / RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. 1.5
Unit V
Conditions IS=10A, VGS=0V
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2/5
2009.06 - Rev.A
R6020ANJ
Electrical characteristics curves
100 10 1 0.1 0.01 0.001 0.0 Ta= 125C Ta= 75C Ta= 25C Ta= -25C
GATE THRESHOLD VOLTAGE: VGS(th) (V)
Data Sheet
100
VDS= 10V Pulsed
6 5 4 3 2 1
VDS= 10V ID= 1mA
DRAIN CURRENT : ID(A)
1
Operation in this area is limited by RDS(ON) Pw=100u
0.1
Tc = 25C Single Pulse
Pw=1m
PW=10m
DC operation
DRAIN CURRENT : ID(A)
10
0.01
0.1
1
10
100
1000
1.5
3.0
4.5
6.0
0 -50
0
50
100
150
DRAIN-SOURCE VOLTAGE : VDS( V ) Fig.1 Maximum Safe Operating Aera
GATE-SOURCE VOLTAGE : VGS(V) Fig.2 Typical Transfer Characteristics
CHANNEL TEMPERATURE: Tch (C) Fig.3 Gate Threshold Voltage vs. Channel Temperature
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( )
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( )
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( )
10
VGS= 10V Pulsed
0.8
Ta=25C Pulsed
0.5 0.4 0.3 0.2 0.1
VGS= 10V Pulsed
1
0.6
ID= 20.0A
0.1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C
0.4 ID= 10.0A 0.2 ID= 20.0A
ID= 10.0A
0.01
0.001 0.01
0 0 5 10 15
0.1
1
10
100
0 -50
0
50
100
150
DRAIN CURRENT : ID(A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
GATE-SOURCE VOLTAGE : VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate Source
CHANNEL TEMPERATURE: Tch(C) Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
VDS= 10V Pulsed
REVERSE DRAIN CURRENT : IDR (A)
100
100
VGS= 0V Pulsed
CAPACITANCE : C (pF)
100000 10000 1000 100 10 1 Ta= 25C f= 1MHz VGS= 0V 0.01 0.1 1 10 100 1000 1000 0 Crss Coss
10
10
Ciss
1 Ta= -25C Ta= 25C Ta= 75C Ta= 125C
1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C
0.1
0.1
0.01 0.01
0.01 0 0.5 1 1.5
0.1
1
10
100
DRAIN CURRENT : ID(A) Fig.7 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : VSD(V) Fig.8 Reverse Drain Current vs. Sourse-Drain Voltage
DRAIN-SOURCE VOLTAGE : VDS(V) Fig.9 Typical Capacitance vs. Drain-Source Voltage
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3/5
2009.06 - Rev.A
R6020ANJ
REVERSE RECOVERY TIME: trr (ns) GATE-SOURCE VOLTAGE : VGS (V)
Data Sheet
1000 10000 tf
SWITCHING TIME : t (ns)
10
1000 td(off) 100
Ta= 25C RG= 10 VGS= 10V Pulsed VDD= 300V
5 Ta= 25C VDD= 300V ID= 20A RG= 10 0 0 10 20 30 Pulsed 40 50 60
100
10 0.1 1
Ta= 25C di / dt= 100A / s VGS= 0V Pulsed 10 100
10 tr 1 0.01 0.1 1
td(on)
10
100
TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic Input Characteristics
REVERSE DRAIN CURRENT : IDR (A) Fig.11 Reverse Recovery Time vs.Reverse Drain Current
DRAIN CURRENT : ID (A) Fig.12 Switching Characteristics
NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t)
10 1 0.1 0.01 0.001
Ta = 25C Single Pulse : 1Unit Rth ch-a t = t xRth ch-a Rth ch-a = 62.5C/W
0.0001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s) Fig.13 Normalized Transient Thermal Resistance vs. Pulse Width
Measurement circuits
Pulse width
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10% 90% td(on) ton tr
90%
50% 10% 90%
td(off) toff
tf
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
VG
VGS ID RL IG(Const.) RG D.U.T. VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate charge waveform
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4/5
2009.06 - Rev.A
R6020ANJ
Data Sheet
VGS
IAS L
VDS
VD(BR)DSS
D.U.T. RG
IAS VDD EAS = 1 2 L IAS
2
VD(BR)DSS VD(BR)DSS - VDD
Fig.3-1 Avalanche Measurement circuit
Fig.3-2 Avalanche waveform
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c 2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.06 - Rev.A
Notice
Notes
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